个人简介：
姜光远，男，汉族，1993年3月生，工学博士，讲师。主要从事物联网工程 、集成电路工程等方面的教学、科研工作，先后完成《ZigBee技术及应用》《无线传感器网络与RFID技术》等课程的教学任务。
目前从事科学研究工作（近5年）
主要从事集成电路工程领域的研究工作，研究方向为GaN基高电子迁移率晶体管（HEMTs）。
代表性科研项目
国家自然科学基金项目：极化库仑场散射应用于GaN基异质结场效应晶体管器件建模的研究，参与
代表性论文、著作、教材及专利
(1) Guangyuan Jiang, Peng Cui, Yang Liu, Guang Yang, Yuanjie Lv, Chen Fu, Guangyuan Zhang, and Zhaojun Lin, Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack, Solid-State Electronics, 201, 108579, (2023).
(2) Guangyuan Jiang, Peng Cui, Guangyuan Zhang, Yuping Zeng, Guang Yang, Chen Fu, Zhaojun Lin, Mingyan Wang, and Heng Zhou, Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors, Microelectronics Journal,129, 105602, (2022).
(3) Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, Yang Liu, and Yan Zhou, The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length, Solid-State Electronics, 186, 108164, (2021).
(4) Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yang Liu, Mingyan Wang, and Heng Zhou, The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors, Superlattices and Microstructures,156, 106987, (2021).
(5) Guangyuan Jiang, Yan Liu, Zhaojun Lin, Guohao Yu, Baoshun Zhang, Yuanjie Lv, Yang Liu, and Yan Zhou, The influence of polarization Coulomb field scattering on the parasitic source resistance of E‑mode P‑GaN/AlGaN/GaN heterostructure field‑effect transistors, Applied Physics A, 127, 458, (2021).
(6) Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, and Yang Liu, The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors, Physica E: Low-dimensional Systems and Nanostructures, 127, 114576, (2021).
(7) Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yongxiong Yang, Yang Liu, Shuoshuo Guo, and Yan Zhou, Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors, AIP Advances, 10, 075212, (2020).
